Sub-Terahertz Emission from Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation
Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dime...
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Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2017
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.132.335